Due to the explosive growth of LED lighting, the demand for MOCVD is directly increased. According to the comparison of the shipments of the world's major MOCVD suppliers and the number of newly installed MOCVDs in China in recent years, it can be seen that in recent years, the demand for MOCVD in China's semiconductor lighting industry has been more than 60% of the global demand, which is the highest in global demand. Area. The author predicts that the number of new MOCVD in China will be around 150 in 2014, and the total number will reach 1,240. By 2015, the penetration rate of the LED lighting market will rapidly increase from the current deficit of less than 9 to 30. However, the hot market in China's MOCVD equipment market also indicates that the degree of competition is also growing secretly. Mr. CEOMartinGoetzeler from Germany Ai Siqiang Co., Ltd. said: We will fully support customers in the Chinese market and believe that there will be a better future. We are very honored to invite our customers and partners to explain and share application experience on site. We hope that our revolutionary products in the LED large-scale manufacturing environment can better serve customers' better mass production. Subsequently, Mr. Andreas Toennis, Chief Technology Officer of Aisiqiang Co., Ltd., followed in detail the revolutionary products of AIXTRON in the face of fiercely competitive LED mass production environment. Mr. Andreas Toennis said that the LED chip and packaging market has experienced many years of oversupply. At the same time, short-wave users in LEDs have realized the potential of LEDs in general lighting and promoted the accelerated adoption of LED lighting products. The reduction in cost per lumen is also the most important driver of LED penetration. The latest market report shows that the total gap in LED chips is still increasing in 2015 and 2016. In the fiercely competitive LED mass production market, manufacturers need to reduce costs and improve the performance of LEDs while meeting the needs of the entire market capacity. Because the growth of epitaxial films represents the most critical technology in the chip manufacturing process, the performance of MOCVD mass production equipment is of strategic importance. Capacity, yield and cost of ownership CoO is a key factor in winning the competition. The AIXTRON MOCVD technology R&D roadmap reflects the importance of these market needs. Working closely with customers, AIXTRON defines key factors that enable MOCVD users to successfully shape the future market. In this report, AIXTRON Chief Technology Officer also details the fast and effective path to improve production economics and ensure greater success for AIXTRON customers. Mr. Andreas Toennis said. Subsequently, Dr. Wu Liangwen, Executive Vice President and General Manager of Chip Business Unit of Guangdong Dehao Runda Electric Co., Ltd. made a special report entitled 4-inch large-scale production technology based on CRIUSII-XL platform. The report begins with a brief introduction to the LED lighting market and trends. Wu Liangwen said that how to reduce the cost per unit of lumens in large-scale production is the key to winning market competition. It is expected that the new capacity in 2015 will also be four inches. At the same time, he also elaborated on the use of CRIUS in detail? The II-XL platform took advantage of the 4-inch mass production technology and had an in-depth exchange with the guests and media friends present. Then, Mr. Wu Chaoyu, Assistant General Manager of Sanan Optoelectronics Co., Ltd., also elaborated on the stable mass production of the quaternary products based on the AIXTRONG4-TM machine. Wu Chaoyu said that Sanan Optoelectronics produces a variety of four-yuan products, and its brightness is extremely competitive in the market. Moreover, the photoelectric performance of LED products produced by G4TM and the repeatability of the machine under various maintenance conditions are compared with that of the previous generation G3. The maintenance cycle of G4TM is short and the system recovery is fast; The film cost is better. The G4 machine can achieve stable mass production of ultra-high brightness LEDs. By optimizing the structure and the airflow of the machine, stable production with ultra-high brightness can be achieved; the performance can be maintained after adjusting the growth rate appropriately; the reasonable combination of TM and bake furnace can improve the stability of the machine. At the same time, Mr. Tom Thieme, Marketing Director of LaytecAG, also attracted a lot of attention from the on-site guests with a technical report titled Reduce Production Costs by In-situ Monitoring Technology. According to TomThieme, GaN-based device structures, such as high-brightness LEDs and UV-emitting diodes, have become more demanding due to more stringent control requirements for wavelength uniformity and repeatability of product results. In order to meet the goal of LEDs in optimizing product yield and reducing production costs, advanced in-situ measurement and process control reduce the operating cost of epitaxial chips. We are all about measuring the industrial goal of improving and improving LED devices with more sophisticated and more reliable process control. Mr. Tom Thieme also said that in cooperation with MOX equipment manufacturer AIXTRON and AIXTRON, a manufacturer of many LEDs, and the manufacturers of LEDs, a unique modular in-situ platform was established to satisfy customers. demand. We are strongly concerned with the advantages of using proven in-situ inspection systems, such as accurate and reliable detection of epitaxial temperature, reflectivity of all grown materials, and advanced curvature, and extending these known advantages to process control. Environment. At the same time, at this seminar, Ai Siqiang also showed how the process control platform can significantly reduce operating costs and increase the export yield. According to the reporter, GaN has attracted people's interest in high-power applications, power distribution and electron transfer. In order to strengthen the position of these applications in the market and to enable them to be commercialized, a prerequisite is the low cost production of high electron mobility transistors. One of the factors that reduces device cost is the uniformity of material growth and the yield of electrical properties when increasing the substrate size. In addition, the use of silicon substrates to grow epitaxial materials can also reduce the cost of these devices because silicon substrates are cheaper and have larger sizes and can be consistent with the back-end process lines of silicon semiconductors. To this end, Professor Michael Heuken, Vice President of R&D of Ai Siqiang Co., Ltd., also reported the finale of the planetary reactor MOCVD technology, which is a necessary solution for power electronics, and shared the planetary reactor MOCVD with the guests and business representatives present. A new perspective that technology brings to businesses. Professor Michael Heuken said that in order to meet these needs, we have created an AIXG5 high-temperature planetary reactor that can hold eight 6-inch films. Also, in order to evaluate the performance of the reaction chamber, we established a benchmark for high electron mobility crystal structures on high silicon substrates. The final transistor was produced and the performance was characterized. At the same time, we have now obtained transistors with high breakdown voltage and high leakage current density. These transistors also show very good value performance, resulting in low energy loss of high power devices. We interpret and discuss additional results based on experimental results on an AIXG planetary metal organic chemical vapor deposition chamber that can grow five 200 mm substrates, as well as a transfer strategy for a larger substrate.
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